7 February 2011 Electrical characterization of long wavelength VCSELs with tunnel junction
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We present results on the electrical characterization of commercial fiber pigtailed 1. 55 μm 2.5 Gb/s VCSEL based on InAlGaAs active region, tunnel junction (TJ), air-gap aperture and InAlGaAs/InAlAs mirrors. The current-voltage (I-V) characteristics were measured and the results were fitted to the analytical expressions of an equivalent circuit considering the TJ in series with the active junction and a series resistance. Carrier capture/escape effects were considered in order to account for the reduced value of the drop in the measured differential resistance at threshold. The electrical parameters of both junctions were determined, showing that the TJ was responsible for most of the voltage drop at threshold. High frequency electrical impedance measurements were used to determine internal parameters as well as the role of external parasitics. The results were analyzed using a small signal equivalent circuit which includes the TJ, carrier capture/escape effects, the cavity parasitics, and the electrical access. A good agreement between the experimental and the equivalent circuit impedances at different bias was obtained by considering the differential resistances of the active and tunnel junctions extracted from the I-V characteristics, yielding reasonable values of the dynamic time constants and of the recombination coefficients.
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A. Consoli, A. Consoli, J. Arias, J. Arias, J. M. Tijero, J. M. Tijero, F. J. López Hernández, F. J. López Hernández, I. Esquivias, I. Esquivias, } "Electrical characterization of long wavelength VCSELs with tunnel junction", Proc. SPIE 7952, Vertical-Cavity Surface-Emitting Lasers XV, 79520C (7 February 2011); doi: 10.1117/12.873860; https://doi.org/10.1117/12.873860


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