7 February 2011 Higher speed VCSELs by photon lifetime reduction
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The impedance characteristics and the effects of photon lifetime reduction on the performance of high-speed 850 nm VCSELs are investigated. Through S11 measurements and equivalent circuit modeling we show that the parasitic mesa capacitance can be significantly reduced by using multiple oxide layers. By performing a shallow surface etch (25 - 55 nm) on the fabricated VCSELs, we are able to reduce the photon lifetime by up to 80% and thereby significantly improve both static and dynamic properties of the VCSELs. By optimizing the photon lifetime we are able to enhance the 3dB modulation bandwidth of 7 μm oxide aperture VCSELs from 15 GHz to 23 GHz and finally demonstrate errorfree transmission at up to 40 Gbit/s.
© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Petter Westbergh, Petter Westbergh, Johan S. Gustavsson, Johan S. Gustavsson, Benjamin Kögel, Benjamin Kögel, Åsa Haglund, Åsa Haglund, Anders Larsson, Anders Larsson, Andrew Joel, Andrew Joel, } "Higher speed VCSELs by photon lifetime reduction", Proc. SPIE 7952, Vertical-Cavity Surface-Emitting Lasers XV, 79520K (7 February 2011); doi: 10.1117/12.873161; https://doi.org/10.1117/12.873161


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