16 February 2011 Plasmonic cladding InGaN MQW laser diodes
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Proceedings Volume 7953, Novel In-Plane Semiconductor Lasers X; 79530I (2011) https://doi.org/10.1117/12.873929
Event: SPIE OPTO, 2011, San Francisco, California, United States
Abstract
In the present work we demonstrate a concept of a "weak plasmonic cladding" for the improved transversal optical confinement in the structures of nitride lasers diodes emitting in the violet and blue spectral region. We show that by using highly doped GaN:O or GaN:Si layers we can induced the reduction of the refractive index by around 1-2% comparing to a lightly doped material. Such a material can be effectively used as optical cladding replacing thick, highly strained AlGaN layers. Plasmonic claddings can be grown by two methods: first of them is High Nitrogen Pressure Solution growth (an introduced donor is an oxygen) and Molecular Beam Epitaxy with silicon as a donor. In the both cases we can reach a free carrier concentration of up to around 1020cm-3. MOVPE method so far did not show capabilities for achieving so high doping level. We demonstrate the use of such layers for the construction of the violet and blue laser diodes and laser diodes mini-arrays showing a total suppression of the substrate mode leakage.
© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
P. Perlin, K. Holc, M. Sarzynski, M. Leszczynski, R. Czernecki, L. Marona, P. Wisniewski, G. Cywinski, C. Skierbiszewski, M. Bockowski, I. Grzegory, and T. Suski "Plasmonic cladding InGaN MQW laser diodes", Proc. SPIE 7953, Novel In-Plane Semiconductor Lasers X, 79530I (16 February 2011); doi: 10.1117/12.873929; https://doi.org/10.1117/12.873929
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