16 February 2011 Quantum dot composite light sources
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Proceedings Volume 7953, Novel In-Plane Semiconductor Lasers X; 795302 (2011) https://doi.org/10.1117/12.875227
Event: SPIE OPTO, 2011, San Francisco, California, United States
Abstract
In this effort, we present the most recent progress towards fabrication and testing of quantum dot composite materials. These materials are important steps towards easy integration of a light source on silicon. Quantum dot composites are formed by incorporating quantum dots in a host material that acts to protect and maintain the characteristics of the quantum dots, as well as to act as a patternable matrix for lithography and etching. In this effort, commercially available IR emitting PbS quantum dots (Evident Technologies) were incorporated with PMMA and poly (hexyl methacrylate) and their photoluminescence spectra was examined over time. A large shift in the photoluminescence emission peak over the course of several days was observed in all composites. This could be due to oxidation despite being in a host.
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David W. Grund, David W. Grund, Benjamin C. Olbricht, Benjamin C. Olbricht, Dennis W. Prather, Dennis W. Prather, } "Quantum dot composite light sources", Proc. SPIE 7953, Novel In-Plane Semiconductor Lasers X, 795302 (16 February 2011); doi: 10.1117/12.875227; https://doi.org/10.1117/12.875227
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