4 February 2011 Gain and absorption characteristics of bilayer quantum dot lasers beyond 1.3 μm
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Proceedings Volume 7953, Novel In-Plane Semiconductor Lasers X; 795303 (2011) https://doi.org/10.1117/12.874214
Event: SPIE OPTO, 2011, San Francisco, California, United States
In this paper we report on the multi-section gain and absorption analysis of strain engineered molecular beam epitaxy (MBE) grown GaAs and InGaAs capped bilayers. The InGaAs capped bilayer quantum dot (QD) lasers extends the room temperature lasing wavelength to 1.45 μm. The spectral measurement of gain demonstrates that net modal gain is achieved beyond 1.5 μm at room temperature. Analysis of the temperature and current density dependence gain characteristics of a GaAs capped bilayer sample indicate that the temperature sensitivity of threshold current around room temperature is due to phonon assisted thermal escape of carriers from the QDs.
© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Mohammed A. Majid, Mohammed A. Majid, Siming C. Chen, Siming C. Chen, David T. D. Childs, David T. D. Childs, H. Shahid, H. Shahid, Robert J. Airey, Robert J. Airey, Kenneth Kennedy, Kenneth Kennedy, Richard A. Hogg, Richard A. Hogg, Edmund Clarke, Edmund Clarke, Peter Spencer, Peter Spencer, Ray Murray, Ray Murray, } "Gain and absorption characteristics of bilayer quantum dot lasers beyond 1.3 μm", Proc. SPIE 7953, Novel In-Plane Semiconductor Lasers X, 795303 (4 February 2011); doi: 10.1117/12.874214; https://doi.org/10.1117/12.874214

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