16 February 2011 Nanopatterned quantum dot active region lasers on InP substrates
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Proceedings Volume 7953, Novel In-Plane Semiconductor Lasers X; 795304 (2011) https://doi.org/10.1117/12.875199
Event: SPIE OPTO, 2011, San Francisco, California, United States
Abstract
We employ an alternate approach to Stranski-Krastanow (SK) QD formation involving the use of nanopatterning with diblock copolymers combined with selective MOCVD growth, enabling QD formation over large surface areas intended for device application. This approach allows for increased control over the QD size and distribution and elimination of the problematic wetting layer associated with SK QDs. Cross-sectional TEM studies of the nanopatterned QD active regions confirm the absence of a wetting layer, and AFM/SEM measurements indicate high QD densities are achieved (>6x1010 cm-2). Furthermore, the process is applicable to large surface coverage, showing promise for implementation into long wavelength (λ = 1.3-1.5μm) sources employing either lattice-matched or strained QDs. Preliminary device results demonstrate LT (up to 170K) InP-based laser operation from devices employing patterned lattice-matched InxGa1- xAs QD (~ 20 nm dia.) active regions. The formation of high density compressively strained InAs QDs on InP substrates is also demonstrated using the nanopatterning and selective growth process.
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L. J. Mawst, L. J. Mawst, J. H. Park, J. H. Park, Y. Huang, Y. Huang, J. Kirch, J. Kirch, Y. Sin, Y. Sin, B. Foran, B. Foran, C.-C. Liu, C.-C. Liu, P. F. Nealey, P. F. Nealey, T. F. Kuech, T. F. Kuech, } "Nanopatterned quantum dot active region lasers on InP substrates", Proc. SPIE 7953, Novel In-Plane Semiconductor Lasers X, 795304 (16 February 2011); doi: 10.1117/12.875199; https://doi.org/10.1117/12.875199
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