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16 February 2011 Deep etched distributed Bragg reflector (DBR) InP/AlGaInP quantum dot lasers
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Proceedings Volume 7953, Novel In-Plane Semiconductor Lasers X; 795308 (2011)
Event: SPIE OPTO, 2011, San Francisco, California, United States
By optimising an InP/AlGaInP quantum dot size distribution a broad and relatively flat topped gain spectra can be achieved. Using the segmented contact method we measure the optical gain spectra and use this to explain the range of lasing wavelengths that can obtained by varying the grating structure of deep etched DBR lasers. We describe the optimisation of a simple single stage ICP etch process suitable for producing anisotropic microstructures in this material system and the resulting deep-etched DBR lasers. Measurements of emission wavelength made between 220 and 320 K on a ridge laser, fabricated with cleaved facets, reveals a temperature dependence on of 0.14 nm/K. DBR structures have been used to improve this behaviour, with a dependence of peak wavelength with temperature of 0.07 nm/K, over the same temperature range. Measurements on a 4 μm wide DBR ridge laser show they can be operated up to 17 nm from the peak emission of a ridge laser operating at the same current density.
© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
S. Shutts, G. Edwards, S. N. Elliott, P. M. Smowton, and A. B. Krysa "Deep etched distributed Bragg reflector (DBR) InP/AlGaInP quantum dot lasers", Proc. SPIE 7953, Novel In-Plane Semiconductor Lasers X, 795308 (16 February 2011);

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