16 February 2011 1.55 μm directly modulated CCIG lasers fabricated by surface-defined lateral feedback gratings
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Proceedings Volume 7953, Novel In-Plane Semiconductor Lasers X; 79530E (2011) https://doi.org/10.1117/12.874043
Event: SPIE OPTO, 2011, San Francisco, California, United States
Abstract
To combine low-cost fabrication and high-speed data communication like 100 GBit/s, multi-section DBR lasers are developed with nanoimprint compatible surface defined gratings. This laser design has the potential to enhance the modulation bandwidth by exciting a higher order optical mode, the so-called photon-photon resonance (PPR). ICP-RIE etching was used to transfer the e-beam exposed surface pattern in one step into the semiconductor. High aspect ratios of > 1:15, vertical trenches with a width of about 140 nm and an etch depth of > 2 μm were obtained for the lateral gratings. Three-section DBR lasers are fabricated on an MOVPE grown 1.5 μm InP laser material exhibiting CW threshold currents of 94 mA for a 0.9 mm long device. A side mode suppression ratio of > 50 dB could be achieved demonstrating a high enough coupling strength of the lateral gratings. The influence of different operation conditions (currents, temperature) and dependence on the grating period on threshold current and emission wavelength are studied and will be discussed in this paper. First high frequency measurements in operation conditions without PPR enhancement show a - 3dB bandwidth of about 15 GHz.
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Sohaib Afzal, Florian Schnabel, Wenzel Scholz, Johann-Peter Reithmaier, Gadi Eisenstein, David Gready, Olivier Parillaud, Michel Krakowski, Ivo Montrosset, Marco Vallone, "1.55 μm directly modulated CCIG lasers fabricated by surface-defined lateral feedback gratings", Proc. SPIE 7953, Novel In-Plane Semiconductor Lasers X, 79530E (16 February 2011); doi: 10.1117/12.874043; https://doi.org/10.1117/12.874043
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