16 February 2011 Gain characteristics of deep UV AlGaN quantum wells lasers
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Proceedings Volume 7953, Novel In-Plane Semiconductor Lasers X; 79530H (2011) https://doi.org/10.1117/12.875079
Event: SPIE OPTO, 2011, San Francisco, California, United States
Abstract
The optical gain characteristics of high Al-content AlGaN quantum wells (QWs) are analyzed for deep UV lasers. The effect of crystal-field split-off hole (CH) and heavy-hole (HH) bands crossover on the gain characteristics of AlGaN QW with AlN barriers is analyzed. Attributing to the strong transition between conduction - CH bands, the TM spontaneous emission recombination rate is enhanced significantly for high Al-content AlGaN QWs. Large TM-polarized material gain is shown as achievable for high Al-content AlGaN QWs, which indicates the feasibility of TM lasing for lasers emitting at ~220-230 nm.
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Jing Zhang, Jing Zhang, Hongping Zhao, Hongping Zhao, Nelson Tansu, Nelson Tansu, } "Gain characteristics of deep UV AlGaN quantum wells lasers", Proc. SPIE 7953, Novel In-Plane Semiconductor Lasers X, 79530H (16 February 2011); doi: 10.1117/12.875079; https://doi.org/10.1117/12.875079
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