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16 February 2011 High peak power picoseconds optical pulse generation from GaInN semiconductor diode lasers
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Proceedings Volume 7953, Novel In-Plane Semiconductor Lasers X; 79530J (2011) https://doi.org/10.1117/12.877030
Event: SPIE OPTO, 2011, San Francisco, California, United States
Abstract
We present optical pulse generation with 100 W peak power, 3 ps temporal duration, and 1 GHz repetition from a GaInN master oscillator power amplifier (MOPA). An external cavity GaInN laser diode is passively mode-locked to generate 4 W peak power optical pulses as a master oscillator, and a semiconductor optical amplifier (SOA) effectively amplified these to a high peak power of more than 100 W. Two major factors that contributed to effective amplification of optical pulses were the generation of clean optical pulses without sub-pulse components by the GaInN mode-locked laser diode and suppression of amplified spontaneous emission in the SOA. This novel high-peak-power pulse source is used to induce multi-photon absorption to create sub-micrometer recording marks in a bulk plastic recording media. The realization of an all-semiconductor pulse source is a significant breakthrough towards a practical 3D optical data storage system.
© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Rintaro Koda, Tomoyuki Oki, Takao Miyajima, Hideki Watanabe, Shunsuke Kono, Masaru Kuramoto, Masao Ikeda, and Hiroyuki Yokoyama "High peak power picoseconds optical pulse generation from GaInN semiconductor diode lasers", Proc. SPIE 7953, Novel In-Plane Semiconductor Lasers X, 79530J (16 February 2011); doi: 10.1117/12.877030; https://doi.org/10.1117/12.877030
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