16 February 2011 Dynamics of GaN-based laser diodes from violet to green
Author Affiliations +
Proceedings Volume 7953, Novel In-Plane Semiconductor Lasers X; 79530K (2011) https://doi.org/10.1117/12.874996
Event: SPIE OPTO, 2011, San Francisco, California, United States
We present a systematic study of the dynamics of nitride laser diodes with different emission wavelengths ranging from violet (409 nm) to green (512 nm). The current-dependent relaxation behavior of the laser diodes above threshold is analyzed with high temporal and spectral resolution and electroluminescence decay measurements below threshold are employed to measure the charge carrier lifetimes at low excitation. We compare the experimental results to rate equation simulations to investigate on the origin of the differences in the dynamical behavior as function of the laser wavelength. From fitting these simulations to the experiment we extract device parameters such as the carrier lifetime at threshold and the differential gain.
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Wolfgang G Scheibenzuber, Wolfgang G Scheibenzuber, Christian Hornuss, Christian Hornuss, Ulrich T. Schwarz, Ulrich T. Schwarz, } "Dynamics of GaN-based laser diodes from violet to green", Proc. SPIE 7953, Novel In-Plane Semiconductor Lasers X, 79530K (16 February 2011); doi: 10.1117/12.874996; https://doi.org/10.1117/12.874996

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