16 February 2011 Broadband semiconductor terahertz laser based on heterogeneous cascades
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Proceedings Volume 7953, Novel In-Plane Semiconductor Lasers X; 79530P (2011) https://doi.org/10.1117/12.874600
Event: SPIE OPTO, 2011, San Francisco, California, United States
Abstract
We present a development of a broad gain heterogeneous quantum cascade laser for terahertz frequencies. By placing appropriate different active-regions based on a four-quantum-well design into a double-metal waveguide we obtained laser emitting gapless over a bandwidth of 1 THz, between 3.2 to 2.2 THz. This means that this single-device source covers an emission range of nearly 40 % around the center frequency. In pulsed mode operation, our devices show threshold current density as low as 285 A/cm2 and they operate up to 125 K. We also report on continuous wave measurements.
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Dana Turcinková, Dana Turcinková, Giacomo Scalari, Giacomo Scalari, Maria I. Amanti, Maria I. Amanti, Fabrizio Castellano, Fabrizio Castellano, Mattias Beck, Mattias Beck, James Lloyd-Hughes, James Lloyd-Hughes, Jérôme Faist, Jérôme Faist, } "Broadband semiconductor terahertz laser based on heterogeneous cascades", Proc. SPIE 7953, Novel In-Plane Semiconductor Lasers X, 79530P (16 February 2011); doi: 10.1117/12.874600; https://doi.org/10.1117/12.874600
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