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16 February 2011 InGaAs/AlInAs quantum cascade laser sources based on intra-cavity second harmonic generation emitting in 2.6-3.6 micron range
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Proceedings Volume 7953, Novel In-Plane Semiconductor Lasers X; 795315 (2011) https://doi.org/10.1117/12.879232
Event: SPIE OPTO, 2011, San Francisco, California, United States
Abstract
We discuss the design and performance of quantum cascade laser sources based on intra-cavity second harmonic generation operating in at wavelengths shorter than 3.7μm. A passive heterostructure tailored for giant optical nonlinearity is integrated on top of an active region and patterned for quasi-phasematching. We demonstrate operation of λ≈3.6μm, λ≈3.0μm, and λ≈2.6m devices based on lattice-matched and strain-compensated InGaAs/AlInAs/InP materials. Threshold current densities of typical devices with nonlinear sections are only 10-20% higher than that of the reference lasers without the nonlinear section. Our best devices have threshold current density of 2.2kA/cm2 and provide approximately 35μW of second-harmonic output at 2.95μm at room temperature. The second-harmonic conversion efficiency is approximately 100μW/W2. Up to two orders of magnitude higher conversion efficiencies are expected in fully-optimized devices.
© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
M. A. Belkin, M. Jang, R. W. Adams, J. X. Chen, W. O. Charles, C. Gmachl, L. W. Cheng, F.-S. Choa, X. Wang, M. Troccoli, A. Vizbaras, M. Anders, C. Grasse, and M.-C. Amann "InGaAs/AlInAs quantum cascade laser sources based on intra-cavity second harmonic generation emitting in 2.6-3.6 micron range", Proc. SPIE 7953, Novel In-Plane Semiconductor Lasers X, 795315 (16 February 2011); https://doi.org/10.1117/12.879232
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