InGaAs/AlInAs quantum cascade laser sources based on intra-cavity second harmonic generation emitting in 2.6-3.6 micron range

M. A. Belkin; M. Jang; R. W. Adams; J. X. Chen; W. O. Charles; C. Gmachl; L. W. Cheng; F.-S. Choa; X. Wang; M. Troccoli; A. Vizbaras; M. Anders; C. Grasse; M.-C. Amann

doi:10.1117/12.879232

Translator Disclaimer

16 February 2011 InGaAs/AlInAs quantum cascade laser sources based on intra-cavity second harmonic generation emitting in 2.6-3.6 micron range

M. A. Belkin, M. Jang, R. W. Adams, J. X. Chen, W. O. Charles, C. Gmachl, L. W. Cheng, F.-S. Choa, X. Wang, M. Troccoli, A. Vizbaras, M. Anders, C. Grasse, M.-C. Amann

Author Affiliations +

Proceedings Volume 7953, Novel In-Plane Semiconductor Lasers X; 795315 (2011) https://doi.org/10.1117/12.879232
Event: SPIE OPTO, 2011, San Francisco, California, United States

Abstract

We discuss the design and performance of quantum cascade laser sources based on intra-cavity second harmonic generation operating in at wavelengths shorter than 3.7μm. A passive heterostructure tailored for giant optical nonlinearity is integrated on top of an active region and patterned for quasi-phasematching. We demonstrate operation of λ≈3.6μm, λ≈3.0μm, and λ≈2.6m devices based on lattice-matched and strain-compensated InGaAs/AlInAs/InP materials. Threshold current densities of typical devices with nonlinear sections are only 10-20% higher than that of the reference lasers without the nonlinear section. Our best devices have threshold current density of 2.2kA/cm² and provide approximately 35μW of second-harmonic output at 2.95μm at room temperature. The second-harmonic conversion efficiency is approximately 100μW/W². Up to two orders of magnitude higher conversion efficiencies are expected in fully-optimized devices.

Citation Download Citation

M. A. Belkin, M. Jang, R. W. Adams, J. X. Chen, W. O. Charles, C. Gmachl, L. W. Cheng, F.-S. Choa, X. Wang, M. Troccoli, A. Vizbaras, M. Anders, C. Grasse, and M.-C. Amann "InGaAs/AlInAs quantum cascade laser sources based on intra-cavity second harmonic generation emitting in 2.6-3.6 micron range", Proc. SPIE 7953, Novel In-Plane Semiconductor Lasers X, 795315 (16 February 2011); https://doi.org/10.1117/12.879232

ACCESS THE FULL ARTICLE