16 February 2011 3.5 μm strain balanced GaInAs/AlInAs quantum cascade lasers operating at room temperature
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Proceedings Volume 7953, Novel In-Plane Semiconductor Lasers X; 79531A (2011) https://doi.org/10.1117/12.882762
Event: SPIE OPTO, 2011, San Francisco, California, United States
Abstract
We demonstrate room temperature lasing of quantum cascade lasers (QCLs) operating at 3.45 and 3.55 μm under pulsed and continuous wave (CW) operations, respectively. To the best of our knowledge those are the shortest wavelengths ever achieved at room temperature from QCLs with strain balanced GaInAs/AlInAs material on InP substrate. With the back facet high reflection coated, a maximum output power of 60 mW was obtained at 10 °C under CW operation. A tuning range of 124 cm-1 was obtained in a pulsed mode in external cavity configuration.
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Feng Xie, Catherine Caneau, Herve P. LeBlanc, Nick J. Visovsky, Yin Wang, Gerard Wysocki, Lawrence C. Hughes, Chung-En Zah, "3.5 μm strain balanced GaInAs/AlInAs quantum cascade lasers operating at room temperature", Proc. SPIE 7953, Novel In-Plane Semiconductor Lasers X, 79531A (16 February 2011); doi: 10.1117/12.882762; https://doi.org/10.1117/12.882762
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