16 February 2011 Control of slow axis mode behaviour with waveguide phase structures in semiconductor broad-area lasers
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Proceedings Volume 7953, Novel In-Plane Semiconductor Lasers X; 79531J (2011) https://doi.org/10.1117/12.881727
Event: SPIE OPTO, 2011, San Francisco, California, United States
Abstract
One of the most common methods to increase the output power of semiconductor waveguide lasers is broadening the stripe width of the active region. However, this results in higher order transverse modes to be amplified which impairs the beam quality and increases the beam divergence. By integrating optical elements into the cavity, it is possible to control the amplitude shape and the number of modes which are amplified in the laser. This paper reports on aspects to integrate phase and amplitude modifying microstructures into a semiconductor waveguide resonator by adding an additional lithographic step to the fabrication process of broad area laser diodes. The latest experimental results of such structured InGaAIP broad area lasers revealed a significant improvement of the beam quality even at a high operation current. Hence, the expansion of the stripe width of the amplifying region without degrading the beam quality is possible. The demonstrated power-current characteristics of structured laser diodes exhibit a low threshold current and a high efficiency.
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Hans-Christoph Eckstein, Hans-Christoph Eckstein, Uwe D. Zeitner, Uwe D. Zeitner, Kemal Ahmed, Kemal Ahmed, Wolfgang Schmid, Wolfgang Schmid, Uwe Strauss, Uwe Strauss, } "Control of slow axis mode behaviour with waveguide phase structures in semiconductor broad-area lasers", Proc. SPIE 7953, Novel In-Plane Semiconductor Lasers X, 79531J (16 February 2011); doi: 10.1117/12.881727; https://doi.org/10.1117/12.881727
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