16 February 2011 Multi-watt level short wavelength quantum cascade lasers
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Proceedings Volume 7953, Novel In-Plane Semiconductor Lasers X; 79531L (2011) https://doi.org/10.1117/12.872739
Event: SPIE OPTO, 2011, San Francisco, California, United States
Abstract
A strain-balanced, AlInAs/InGaAs/InP quantum cascade laser structure, designed for light emission at 4.0 μm using nonresonant extraction design approach, was grown by molecular beam epitaxy. Laser devices were processed in buried heterostructure geometry. An air-cooled laser system incorporating a 10 mm by 11.5 μm laser with antireflection coated front facet and high reflection coated back facet delivered over 2 W of single-ended optical power in a collimated beam. Maximum continuous wave room temperature wallplug efficiency of 5.0% was demonstrated for a high reflection coated 3.65 mm by 8.7 μm laser mounted on an aluminum nitride submount. Lasers processed from a 3.5μm structure with a similar design delivered 50 mW in CW mode and 300 mW of average power in high duty cycle mode at 265K. The low performance of the 3.5 μm structure is attributed to the fact that the bottom of indirect profile is located below the upper laser level for this design.
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Arkadiy Lyakh, Arkadiy Lyakh, Richard Maulini, Richard Maulini, Alexei G. Tsekoun, Alexei G. Tsekoun, Rowel Go, Rowel Go, C. Kumar N. Patel, C. Kumar N. Patel, } "Multi-watt level short wavelength quantum cascade lasers", Proc. SPIE 7953, Novel In-Plane Semiconductor Lasers X, 79531L (16 February 2011); doi: 10.1117/12.872739; https://doi.org/10.1117/12.872739
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