16 February 2011 Comparison of gain measurement techniques for 1.3μm quantum dot lasers
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Proceedings Volume 7953, Novel In-Plane Semiconductor Lasers X; 79531W (2011) https://doi.org/10.1117/12.875148
Event: SPIE OPTO, 2011, San Francisco, California, United States
This paper reports on the direct comparison of Hakki-Paoli and segmented contact method gain spectra measurement techniques for InAs/GaAs 1.3μm quantum dot laser material. This was made possible by realizing a single-mode segmented contact device structure. The differences in required apparatus, ease of measurements, signal to noise ratio, and relative advantages and disadvantages of these two complementary techniques are discussed under continuous wave operation. As expected, at current densities (prior to possible self heating effects) the techniques are shown to give essentially identical results. However, the segmented contact method is demonstrated to be more accurate for internal loss measurements. A method to remove self heating effects in the Hakki-Paoli measurements is described and allows the gain and spontaneous emission measurements to be performed at carrier densities as high as 5.5kA/cm2 with a constant cavity temperature.
© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
H. Shahid, H. Shahid, D. T. D. Childs, D. T. D. Childs, B. J. Stevens, B. J. Stevens, R. A. Hogg, R. A. Hogg, } "Comparison of gain measurement techniques for 1.3μm quantum dot lasers", Proc. SPIE 7953, Novel In-Plane Semiconductor Lasers X, 79531W (16 February 2011); doi: 10.1117/12.875148; https://doi.org/10.1117/12.875148

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