16 February 2011 Controlled intermixing of multiple quantum wells for broadly tunable integrated lasers
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Proceedings Volume 7953, Novel In-Plane Semiconductor Lasers X; 79531Y (2011) https://doi.org/10.1117/12.873579
Event: SPIE OPTO, 2011, San Francisco, California, United States
A broadly tunable MQW laser utilizing a combined impurity-free vacancy disordering and beam steering techniques is proposed and investigated experimentally. The device consists of a beam-steering section and an optical amplifier section fabricated on a GaAs/AlGaAs MQW p-i-n hetrostructure substrate. The beam steering section forms a reconfigurable single mode waveguide that can be positioned laterally by applying electrical currents to two parallel contact stripes. The active core of the gain section contains a GaAs/AlGaAs MQW that is progressively disordered such that an optical beam steered through the selected region experience a peak in the gain spectrum that is determined by the degree of disordering of the MQWs. Furthermore the MQW in the beam-steering section is disordered to the largest extent to minimize optical beam attenuation. The MQW structure was intermixed using an impurity-free vacancy induced disordering technique. The MQW sample is encapsulated with a SiO2 film grown by plasma enhanced chemical vapor deposition (PECVD). The beam steering region is coated with a 400nm thick SiO2 film whereas in the gain section, the SiO2 film is selectively etched such that the thickness grades linearly ranging from 0 to 325nm. The disordering of the entire slab region is then induced by a single rapid thermal annealing step at 975°C for a 20s. Experimental results showed a controllable 10 to 60 nm wavelength blue shift of the peak of the photoluminescence spectrum corresponding to the change in SiO2 caps thickness and a lateral beam steering range up to 20 μm over the slab region.
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Abdullah J. Zakariya, Nathan Bickel, Patrick LiKamWa, "Controlled intermixing of multiple quantum wells for broadly tunable integrated lasers", Proc. SPIE 7953, Novel In-Plane Semiconductor Lasers X, 79531Y (16 February 2011); doi: 10.1117/12.873579; https://doi.org/10.1117/12.873579

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