9 February 2011 Non-polar GaInN-based light-emitting diodes: an approach for wavelength-stable and polarized-light emitters
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Abstract
In absence of piezoelectric polarization along the growth axis, a- and m-plane green GaInN light emitting diodes manifest stable emission wavelength -- independent of the injection current density. The shift of the dominant wavelength is less than 8 nm when varying the forward current density from 0.1 to 38 A/cm2. Furthermore, the light emitted from the growth surface of such non-polar structures shows a very degree of linear polarization. This is attributed to a strong valance band splitting in such anisotropically strained wurtzite GaInN quantum wells . Such light emitting diodes show a high potential for energy efficient display applications.
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Theeradetch Detchprohm, Mingwei Zhu, Shi You, Liang Zhao, Wenting Hou, Christoph Stark, Christian Wetzel, "Non-polar GaInN-based light-emitting diodes: an approach for wavelength-stable and polarized-light emitters", Proc. SPIE 7954, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XV, 79540N (9 February 2011); doi: 10.1117/12.875208; https://doi.org/10.1117/12.875208
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