9 February 2011 Non-polar GaInN-based light-emitting diodes: an approach for wavelength-stable and polarized-light emitters
Author Affiliations +
Abstract
In absence of piezoelectric polarization along the growth axis, a- and m-plane green GaInN light emitting diodes manifest stable emission wavelength -- independent of the injection current density. The shift of the dominant wavelength is less than 8 nm when varying the forward current density from 0.1 to 38 A/cm2. Furthermore, the light emitted from the growth surface of such non-polar structures shows a very degree of linear polarization. This is attributed to a strong valance band splitting in such anisotropically strained wurtzite GaInN quantum wells . Such light emitting diodes show a high potential for energy efficient display applications.
© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Theeradetch Detchprohm, Theeradetch Detchprohm, Mingwei Zhu, Mingwei Zhu, Shi You, Shi You, Liang Zhao, Liang Zhao, Wenting Hou, Wenting Hou, Christoph Stark, Christoph Stark, Christian Wetzel, Christian Wetzel, } "Non-polar GaInN-based light-emitting diodes: an approach for wavelength-stable and polarized-light emitters", Proc. SPIE 7954, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XV, 79540N (9 February 2011); doi: 10.1117/12.875208; https://doi.org/10.1117/12.875208
PROCEEDINGS
12 PAGES


SHARE
Back to Top