9 February 2011 III-nitride nanowires: novel materials for solid-state lighting
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Abstract
Although planar heterostructures dominate current solid-state lighting architectures (SSL), 1D nanowires have distinct and advantageous properties that may eventually enable higher efficiency, longer wavelength, and cheaper devices. However, in order to fully realize the potential of nanowire-based SSL, several challenges exist in the areas of controlled nanowire synthesis, nanowire device integration, and understanding and controlling the nanowire electrical, optical, and thermal properties. Here recent results are reported regarding the aligned growth of GaN and III-nitride core-shell nanowires, along with extensive results providing insights into the nanowire properties obtained using cutting-edge structural, electrical, thermal, and optical nanocharacterization techniques. A new top-down fabrication method for fabricating periodic arrays of GaN nanorods and subsequent nanorod LED fabrication is also presented.
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George T. Wang, Qiming Li, Jianyu Huang, A. Alec Talin, Andrew Armstrong, Prashanth C. Upadhya, Rohit P. Prasankumar, "III-nitride nanowires: novel materials for solid-state lighting", Proc. SPIE 7954, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XV, 79540T (9 February 2011); doi: 10.1117/12.872776; https://doi.org/10.1117/12.872776
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