Novel approaches to realizing chemical lift-off of GaN epilayer from sapphire substrate

Ray-Hua Horng; Tsung-Yen Tsai; Cheng-Ying Yen; Ming-Tsung Hung; Chun-Ting Pan; Dong-Sing Wuu

doi:10.1117/12.872570

9 February 2011 Novel approaches to realizing chemical lift-off of GaN epilayer from sapphire substrate

Ray-Hua Horng, Tsung-Yen Tsai, Cheng-Ying Yen, Ming-Tsung Hung, Chun-Ting Pan, Dong-Sing Wuu

Proceedings Volume 7954, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XV; 795417 (2011) https://doi.org/10.1117/12.872570
Event: SPIE OPTO, 2011, San Francisco, California, United States

Abstract

Chemical lift-off (CLO) technique has been paid more attention since no damages will be induced to GaN epi-layer during the epilayer lift-off process. In this study two novel CLO approaches were used to separate GaN epilayer from sapphire substrate. One is using Ga₂O₃sacrificial layer deposited by pulsed laser deposition. The other is using a stripe patterned SiO₂grown by PECVD. Afterwards, the CLO of GaN epilayers grown on these two templates via metal organic chemical vapor deposition from sapphire substrate was successfully realized with a hydrofluoric acid as an etchant.

Citation Download Citation

Ray-Hua Horng, Tsung-Yen Tsai, Cheng-Ying Yen, Ming-Tsung Hung, Chun-Ting Pan, and Dong-Sing Wuu "Novel approaches to realizing chemical lift-off of GaN epilayer from sapphire substrate", Proc. SPIE 7954, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XV, 795417 (9 February 2011); https://doi.org/10.1117/12.872570

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