10 February 2011 Novel approaches for high-efficiency InGaN quantum wells light-emitting diodes: device physics and epitaxy engineering
Author Affiliations +
Abstract
The challenges and approaches for high-efficiency InGaN quantum wells (QWs) light-emitting diodes (LEDs) are presented. The studies include designs, growths, and device characteristics of 1) InGaN-based QWs LEDs with enhanced matrix element for realizing green-emitting LEDs with high internal quantum efficiency, and 2) InGaN QW LEDs device structure with lattice-matched AlInN-barrier to suppress efficiency-droop in nitride LEDs. Other approaches to improve the efficiency of the nitride LEDs will be discussed as follow: 1) surface plasmon LEDs, 2) new growth approach for dislocation density reduction in GaN, and 3) novel approaches for light extraction efficiency improvement of III-Nitride LEDs.
© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Nelson Tansu, Hongping Zhao, Jing Zhang, Guangyu Liu, Xiao-Hang Li, Yik-Khoon Ee, Renbo Song, Takahiro Toma, Le Zhao, G. S. Huang, "Novel approaches for high-efficiency InGaN quantum wells light-emitting diodes: device physics and epitaxy engineering", Proc. SPIE 7954, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XV, 795418 (10 February 2011); doi: 10.1117/12.875901; https://doi.org/10.1117/12.875901
PROCEEDINGS
9 PAGES


SHARE
Back to Top