10 February 2011 Novel approaches for high-efficiency InGaN quantum wells light-emitting diodes: device physics and epitaxy engineering
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Abstract
The challenges and approaches for high-efficiency InGaN quantum wells (QWs) light-emitting diodes (LEDs) are presented. The studies include designs, growths, and device characteristics of 1) InGaN-based QWs LEDs with enhanced matrix element for realizing green-emitting LEDs with high internal quantum efficiency, and 2) InGaN QW LEDs device structure with lattice-matched AlInN-barrier to suppress efficiency-droop in nitride LEDs. Other approaches to improve the efficiency of the nitride LEDs will be discussed as follow: 1) surface plasmon LEDs, 2) new growth approach for dislocation density reduction in GaN, and 3) novel approaches for light extraction efficiency improvement of III-Nitride LEDs.
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Nelson Tansu, Nelson Tansu, Hongping Zhao, Hongping Zhao, Jing Zhang, Jing Zhang, Guangyu Liu, Guangyu Liu, Xiao-Hang Li, Xiao-Hang Li, Yik-Khoon Ee, Yik-Khoon Ee, Renbo Song, Renbo Song, Takahiro Toma, Takahiro Toma, Le Zhao, Le Zhao, G. S. Huang, G. S. Huang, } "Novel approaches for high-efficiency InGaN quantum wells light-emitting diodes: device physics and epitaxy engineering", Proc. SPIE 7954, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XV, 795418 (10 February 2011); doi: 10.1117/12.875901; https://doi.org/10.1117/12.875901
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