Roll-to-roll fabrication and metastability in metal oxide transistors

Warren B. Jackson; Han-Jun Kim; Ohseung Kwon; Bao Yeh; Randy Hoffman; Devin Mourey; Tim Koch; Carl Taussig; Richard Elder; Albert Jeans

doi:10.1117/12.874180

3 February 2011 Roll-to-roll fabrication and metastability in metal oxide transistors

Warren B. Jackson, Han-Jun Kim, Ohseung Kwon, Bao Yeh, Randy Hoffman, Devin Mourey, Tim Koch, Carl Taussig, Richard Elder, Albert Jeans

Author Affiliations +

Proceedings Volume 7956, Advances in Display Technologies; and E-papers and Flexible Displays; 795604 (2011) https://doi.org/10.1117/12.874180
Event: SPIE OPTO, 2011, San Francisco, California, United States

Abstract

A roll-to-roll process is used to fabricate amorphous silicon and amorphous multicomponent oxide (MCO) transistors on flexible substrates using self aligned imprint lithography (SAIL). SAIL solves the layer to layer alignment problem. The imprint lithography patterned MCO transistors had a mobility of 15 cm²V^-1 sec^-1 and an on-off ratio of 10⁷. Full display arrays with data, gate, hold capacitors and cross-overs were patterned using SAIL technology. Studies of stability of the MCO transistors indicate the importance of controlling O vacancies in the material particularly the back channel. Devices subjected to -10V gate bias stress at 60C under illumination exhibited behavior consistent with state creation in the upper and lower half of the gap near the back channel interface possibly associated with O vacancy formation.

Citation Download Citation

Warren B. Jackson, Han-Jun Kim, Ohseung Kwon, Bao Yeh, Randy Hoffman, Devin Mourey, Tim Koch, Carl Taussig, Richard Elder, and Albert Jeans "Roll-to-roll fabrication and metastability in metal oxide transistors", Proc. SPIE 7956, Advances in Display Technologies; and E-papers and Flexible Displays, 795604 (3 February 2011); https://doi.org/10.1117/12.874180

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