3 February 2011 Single-grain Si TFTs for high-speed flexible electronics
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Existent flat-panel display is mechanically stiff because it requires external connection of IC chips. At its present stage, displays with a-Si, metal oxide semiconductor or organic TFTs require still external connection of data driver and controllers, because of their low carrier mobilities. We will review our recent progress on direct formation of high speed Si circuits fabricated with a plastic compatible temperature. Large Si grains with a diameter of 4 microns were formed on predetermined positions by a pulsed laser crystallization process with a plastic compatible temperature. High performance transistors were fabricated inside a single Si grain.
© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ryoichi Ishihara, Ryoichi Ishihara, Tao Chen, Tao Chen, Michiel van der Zwan, Michiel van der Zwan, Ming He, Ming He, H. Schellevis, H. Schellevis, Kees Beenakker, Kees Beenakker, } "Single-grain Si TFTs for high-speed flexible electronics", Proc. SPIE 7956, Advances in Display Technologies; and E-papers and Flexible Displays, 795605 (3 February 2011); doi: 10.1117/12.876649; https://doi.org/10.1117/12.876649

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