16 March 2011 Integration of an amorphous silicon passive pixel sensor array with a lateral amorphous selenium detector for large area indirect conversion x-ray imaging applications
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Abstract
Previously, we reported on a single-pixel detector based on a lateral a-Se metal-semiconductor-metal structure, intended for indirect conversion X-ray imaging. This work is the continuous effort leading to the first prototype of an indirect conversion X-ray imaging sensor array utilizing lateral amorphous selenium. To replace a structurally-sophisticated vertical multilayer amorphous silicon photodiode, a lateral a-Se MSM photodetector is employed which can be easily integrated with an amorphous silicon thin film transistor passive pixel sensor array. In this work, both 2×2 macro-pixel and 32×32 micro-pixel arrays were fabricated and tested along with discussion of the results.
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Kai Wang, Kai Wang, Mohammad Y. Yazdandoost, Mohammad Y. Yazdandoost, Rasoul Keshavarzi, Rasoul Keshavarzi, Kyung-Wook Shin, Kyung-Wook Shin, Christos Hristovski, Christos Hristovski, Shiva Abbaszadeh, Shiva Abbaszadeh, Feng Chen, Feng Chen, Shaikh Hasibul Majid, Shaikh Hasibul Majid, Karim S. Karim, Karim S. Karim, } "Integration of an amorphous silicon passive pixel sensor array with a lateral amorphous selenium detector for large area indirect conversion x-ray imaging applications", Proc. SPIE 7961, Medical Imaging 2011: Physics of Medical Imaging, 79610V (16 March 2011); doi: 10.1117/12.877592; https://doi.org/10.1117/12.877592
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