26 March 2011 Printability and inspectability of defects on the EUV mask for sub-32nm half pitch HVM application
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Abstract
The availability of defect-free masks remains one of the key challenges for inserting extreme ultraviolet lithography (EUVL) into high volume manufacturing, yet little data is available for understanding native defects on real masks. In this paper, a full field EUV mask is fabricated to see the printability of various defects on the mask. Programmed pit defect shows that minimum printable size of pits could be 17 nm of SEVD from the AIT. However 23.1nm in SEVD is printable from the EUV ADT. Defect printability and identification of its source along from blank fabrication to mask fabrication were studied using various inspection tools. Capture ratio of smallest printable defects was improved to 80% using optimized stack of metrical on wafer and state-of-art wafer inspection tool. Requirement of defect mitigation technology using fiducial mark are defined.
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Sungmin Huh, Sungmin Huh, In-Yong Kang, In-Yong Kang, Sang-Hyun Kim, Sang-Hyun Kim, Hwan-seok Seo, Hwan-seok Seo, Dongwan Kim, Dongwan Kim, Jooon Park, Jooon Park, Seong-Sue Kim, Seong-Sue Kim, Han-Ku Cho, Han-Ku Cho, Kenneth Goldberg, Kenneth Goldberg, Iacopo Mochi, Iacopo Mochi, Tsutomu Shoki, Tsutomu Shoki, Gregg Inderhees, Gregg Inderhees, } "Printability and inspectability of defects on the EUV mask for sub-32nm half pitch HVM application", Proc. SPIE 7969, Extreme Ultraviolet (EUV) Lithography II, 796902 (26 March 2011); doi: 10.1117/12.879384; https://doi.org/10.1117/12.879384
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