7 April 2011 100W 1st generation laser-produced plasma light source system for HVM EUV lithography
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Abstract
We reported 1st generation Laser-Produced Plasma source system "ETS" device for EUV lithography one year ago1). In this paper we update performance status of the 1st generation system. We have improved the system further, maximum burst power is 104W (100kHz, 1 mJ EUV power @ intermediate focus), laser-EUV conversion efficiency is 2.5%. Also continuous operation time is so far up to 8 hours with 5% duty cycle is achieved. We have investigated EUV plasma creation scheme by small experimental device which is facilitated 10Hz operation (maximum). We have proposed double pulse method to create LPP plasma efficiently. This moment we found out 3.3% conversion efficiency operation condition. Based on the engineering data of ETS and small experimental device, now we are developing 2nd generation HVM source; GL200E. The device consists of the original concepts (1) CO2 laser driven Sn plasma, (2) Hybrid CO2 laser system that is combination of high speed (>100kHz) short pulse oscillator and industrial cw-CO2, (3) Magnetic mitigation, and (4) Double pulse EUV plasma creation. The preliminary data are introduced in this paper.
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Hakaru Mizoguchi, Tamotsu Abe, Yukio Watanabe, Takanobu Ishihara, Takeshi Ohta, Tsukasa Hori, Tatsuya Yanagida, Hitoshi Nagano, Takayuki Yabu, Shinji Nagai, Georg Soumagne, Akihiko Kurosu, Krzysztof M. Nowak, Takashi Suganuma, Masato Moriya, Kouji Kakizaki, Akira Sumitani, Hidenobu Kameda, Hiroaki Nakarai, Junichi Fujimoto, "100W 1st generation laser-produced plasma light source system for HVM EUV lithography", Proc. SPIE 7969, Extreme Ultraviolet (EUV) Lithography II, 796908 (7 April 2011); doi: 10.1117/12.880382; https://doi.org/10.1117/12.880382
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