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29 March 2011 Replicated mask surface roughness effects on EUV lithographic patterning and line edge roughness
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Abstract
To quantify the roughness contributions to speckle, a programmed roughness substrate was fabricated with a number of areas having different roughness magnitudes. The substrate was then multilayer coated. Atomic force microscopy (AFM) surface maps were collected before and after multilayer deposition. At-wavelength reflectance and total integrated scattering measurements were also completed. Angle resolved scattering based power spectral densities are directly compared to the AFM based power spectra. We show that AFM overpredicts the roughness in the picometer measurements range. The mask was then imaged at-wavelength for the direct characterization of the aerial image speckle using the SEMATECH Berkeley Actinic Inspection Tool (AIT). Modeling was used to test the effectiveness of the different metrologies in predicting the measured aerial-image speckle. AIT measured contrast values are 25% or more than the calculated image contrast values obtained using the measured rms roughness input. The extent to which the various metrologies can be utilized for specifying tolerable roughness limits on EUV masks is still to be determined. Further modeling and measurements are being planned.
© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Simi A. George, Patrick P. Naulleau, Eric M. Gullikson, Iacopo Mochi, Farhad Salmassi, Kenneth A. Goldberg, and Erik H. Anderson "Replicated mask surface roughness effects on EUV lithographic patterning and line edge roughness", Proc. SPIE 7969, Extreme Ultraviolet (EUV) Lithography II, 79690E (29 March 2011); https://doi.org/10.1117/12.881524
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