5 April 2011 Development of EUV lithography tools at Nikon
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Abstract
Exposure performance of projection optics with different flare level was compared in EUV1. Ultimate resolution of EUV1 was evaluated using alternate phase shift mask and resist modulation was obtained down to 16nmL/S. Modeling of carbon contamination growth and cleaning was established based on exposure experiments using a synchrotron source. Based on the modeling, in-situ cleaning condition using oxygen in EUV1 was optimized. As a result, carbon contamination growth in EUV1 was completely suppressed. Optical design of projection optics with numerical aperture of over 0.4 was investigated. 6-mirror system with central obscuration seems to be promising. EUV actinic wavefront metrology scheme without using a synchrotron source, which can be used as on-body wavefront metrology, was developed and its practicality was demonstrated.
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Katsuhiko Murakami, Tetsuya Oshino, Hiroyuki Kondo, Hiroshi Chiba, Kazushi Nomura, Hidemi Kawai, Yoshiaki Kohama, Kenji Morita, Kazunari Hada, Yukiharu Ohkubo, "Development of EUV lithography tools at Nikon", Proc. SPIE 7969, Extreme Ultraviolet (EUV) Lithography II, 79690P (5 April 2011); doi: 10.1117/12.879305; https://doi.org/10.1117/12.879305
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