5 April 2011 Development of EUV lithography tools at Nikon
Author Affiliations +
Exposure performance of projection optics with different flare level was compared in EUV1. Ultimate resolution of EUV1 was evaluated using alternate phase shift mask and resist modulation was obtained down to 16nmL/S. Modeling of carbon contamination growth and cleaning was established based on exposure experiments using a synchrotron source. Based on the modeling, in-situ cleaning condition using oxygen in EUV1 was optimized. As a result, carbon contamination growth in EUV1 was completely suppressed. Optical design of projection optics with numerical aperture of over 0.4 was investigated. 6-mirror system with central obscuration seems to be promising. EUV actinic wavefront metrology scheme without using a synchrotron source, which can be used as on-body wavefront metrology, was developed and its practicality was demonstrated.
© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Katsuhiko Murakami, Katsuhiko Murakami, Tetsuya Oshino, Tetsuya Oshino, Hiroyuki Kondo, Hiroyuki Kondo, Hiroshi Chiba, Hiroshi Chiba, Kazushi Nomura, Kazushi Nomura, Hidemi Kawai, Hidemi Kawai, Yoshiaki Kohama, Yoshiaki Kohama, Kenji Morita, Kenji Morita, Kazunari Hada, Kazunari Hada, Yukiharu Ohkubo, Yukiharu Ohkubo, } "Development of EUV lithography tools at Nikon", Proc. SPIE 7969, Extreme Ultraviolet (EUV) Lithography II, 79690P (5 April 2011); doi: 10.1117/12.879305; https://doi.org/10.1117/12.879305

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