5 April 2011 The SEMATECH Berkeley MET: extending EUV learning down to 16nm half pitch
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Abstract
Several high-performing resists identified in the past two years have been exposed at the 0.3-numerical-aperture (NA) SEMATECH Berkeley Microfield Exposure Tool (BMET) with an engineered dipole illumination optimized for 18-nm half pitch. Five chemically amplified platforms were found to support 20-nm dense patterning at a film thickness of approximately 45 nm. At 19-nm half pitch, however, scattered bridging kept all of these resists from cleanly resolving larger areas of dense features. At 18-nm half pitch, none of the resists were are able to cleanly resolve a single line within a bulk pattern. With this same illumination a directly imageable metal oxide hardmask showed excellent performance from 22-nm half pitch to 17-nm half pitch, and good performance at 16-nm half pitch, closely following the predicted aerial image contrast. This indicates that observed limitations of the chemically amplified resists are indeed coming from the resist and not from a shortcoming of the exposure tool. The imageable hardmask was also exposed using a Pseudo Phase-Shift-Mask technique and achieved clean printing of 15-nm half pitch lines and modulation all the way down to the theoretical 12.5-nm resolution limit of the 0.3-NA SEMATECH BMET.
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Christopher N. Anderson, Christopher N. Anderson, Lorie Mae Baclea-An, Lorie Mae Baclea-An, Paul E. Denham, Paul E. Denham, Simi A. George, Simi A. George, Kenneth A. Goldberg, Kenneth A. Goldberg, Michael S. Jones, Michael S. Jones, Nathan S. Smith, Nathan S. Smith, Thomas I. Wallow, Thomas I. Wallow, Warren Montgomery, Warren Montgomery, Patrick P. Naulleau, Patrick P. Naulleau, } "The SEMATECH Berkeley MET: extending EUV learning down to 16nm half pitch", Proc. SPIE 7969, Extreme Ultraviolet (EUV) Lithography II, 79690R (5 April 2011); doi: 10.1117/12.881573; https://doi.org/10.1117/12.881573
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