6 April 2011 EUV OPC for 56nm metal pitch
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Proceedings Volume 7969, Extreme Ultraviolet (EUV) Lithography II; 79690U (2011); doi: 10.1117/12.879931
Event: SPIE Advanced Lithography, 2011, San Jose, California, United States
For the logic generations of the 15 nm node and beyond, the printing of pitches at 64nm and below are needed. For EUV lithography to replace ArF-based multi-exposure techniques, it is required to print these patterns in a single exposure process. The k1 factor is roughly 0.6 for 64nm pitch at an NA of 0.25, and k1 ≈ 0.52 for 56nm pitch. These k1 numbers are of the same order at which model based OPC was introduced in KrF and ArF lithography a decade or so earlier. While we have done earlier work that used model-based OPC for the 22nm node test devices using EUV,1 we used a simple threshold model without further resist model calibration. For 64 nm pitch at an NA of 0.25, the OPC becomes more important, and at 56nm pitch it becomes critical. For 15 nm node lithography, we resort to a full resist model calibration using tools that were adapted from conventional optical lithography. We use a straight shrink 22 nm test layout to assess post-OPC printability of a metal layer at pitches at 64 nm and 56 nm, and we use this information to correct test layouts.
© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Martin Burkhardt, Matt Colburn, Yunfei Deng, Emily Gallagher, Hirokazu Kato, Greg McIntyre, Karen Petrillo, Sudhar Raghunathan, Adam C. Smith, Tom Wallow, Obert Wood, Yi Zou, Christian Zuniga, "EUV OPC for 56nm metal pitch", Proc. SPIE 7969, Extreme Ultraviolet (EUV) Lithography II, 79690U (6 April 2011); doi: 10.1117/12.879931; https://doi.org/10.1117/12.879931


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