Translator Disclaimer
5 April 2011 EUV masks under exposure: practical considerations
Author Affiliations +
This paper focuses on the practical side of EUV mask metrology and use. Mask metrics such as film thickness, material properties, feature profile, critical feature size, line edge/width roughness (LER/LWR) and defect levels are measured and monitored on the mask. Any variability in mask properties will be transferred to wafer print results. EUV masks have no pellicle and will be cleaned between exposures to extend use. This additional processing creates new opportunity for modifications to the mask after qualification. This paper quantifies mask variability and the induced change to printed wafer critical dimension (CD). The results are compared to the 56nm wafer pitch targets for CD and LER. This EUV-specific effort is required to determine how close EUV masks are to meeting manufacturing requirements and whether there are areas of development that require additional focus from the industry.
© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Emily Gallagher, Gregory McIntyre, Tom Wallow, Sudharshanan Raghunathan, Obert Wood, Louis Kindt, John Whang, and Monica Barrett "EUV masks under exposure: practical considerations", Proc. SPIE 7969, Extreme Ultraviolet (EUV) Lithography II, 79690W (5 April 2011);


Assessing out of band flare effects at the wafer level...
Proceedings of SPIE (March 22 2010)
Lifetime of EUVL masks as a function of degree of...
Proceedings of SPIE (March 27 2008)
A lifetime study of EUV masks
Proceedings of SPIE (September 24 2010)

Back to Top