7 April 2011 Line width roughness control and pattern collapse solutions for EUV patterning
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Line width roughness (LWR) control is a critical issue in extreme ultraviolet lithography (EUVL). The difficulty of controlling LWR and the need to minimize it have grown as the sensitivity of materials and resolution in the resist patterning process has improved. Another critical feature that has become difficult to control in EUVL and 22nm half-pitch systems is pattern collapse. The increase of aspect ratio that comes from further scaling promotes the onset of pattern collapse. Both pattern collapse and LWR are easily observed in EUVL and leading-edge ArF immersion lithography. This paper will demonstrate recent gains in LWR control in leading EUV films using track-based processes, etch-based improvements, and the results of combined techniques. Also the use of a newly developed EUV-specific FIRM™ rinse chemistry to reduce pattern collapse will be discussed along with future development activities and industry requirements for both LWR and pattern collapse.
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Karen Petrillo, Karen Petrillo, George Huang, George Huang, Dominic Ashworth, Dominic Ashworth, Jacque Georger, Jacque Georger, Liping Ren, Liping Ren, K. Y. Cho, K. Y. Cho, Warren Montgomery, Warren Montgomery, Stefan Wurm, Stefan Wurm, Shinichiro Kawakami, Shinichiro Kawakami, Shannon Dunn, Shannon Dunn, Akiteryu Ko, Akiteryu Ko, } "Line width roughness control and pattern collapse solutions for EUV patterning", Proc. SPIE 7969, Extreme Ultraviolet (EUV) Lithography II, 796913 (7 April 2011); doi: 10.1117/12.879513; https://doi.org/10.1117/12.879513

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