7 April 2011 Out of band radiation effects on resist patterning
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Our previous work estimated the expected out-of-band (OOB) flare contribution at the wafer level assuming that there is a given amount of OOB at the collector focus. We found that the OOB effects are wavelength, resist, and pattern dependent. In this paper, results from rigorous patterning evaluation of multiple OOB-exposed resists using the SEMATECH Berkeley 0.3-NA MET are presented. A controlled amount of OOB is applied to the resist films before patterning is completed with the MET. LER and process performance above and at the resolution limit and at the resolution limits are evaluated and presented. The results typically show a negative impact on LER and process performance after the OOB exposures except in the case of one resist formulation, performance improvement was observed.
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Simi A. George, Simi A. George, Patrick P. Naulleau, Patrick P. Naulleau, "Out of band radiation effects on resist patterning", Proc. SPIE 7969, Extreme Ultraviolet (EUV) Lithography II, 796914 (7 April 2011); doi: 10.1117/12.881161; https://doi.org/10.1117/12.881161


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