7 April 2011 Directly patterned inorganic hardmask for EUV lithography
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Abstract
This paper describes a metal oxide patternable hardmask designed for EUV lithography. The material has imaged 15-nm half-pitch by projection EUV exposure on the SEMATECH Berkeley MET, and 12-nm half-pitch by electron beam exposure. The platform is highly absorbing (16 μm-1) and etch resistant (>100:1 for silicon). These properties enable resist film thickness to be reduced to 20nm, thereby reducing aspect ratio and susceptibility to pattern collapse. New materials and processes show a path to improved photospeed. This paper also presents data for on coating uniformity, metal-impurity content, outgassing, pattern transfer, and resist strip.
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Jason K. Stowers, Jason K. Stowers, Alan Telecky, Alan Telecky, Michael Kocsis, Michael Kocsis, Benjamin L. Clark, Benjamin L. Clark, Douglas A. Keszler, Douglas A. Keszler, Andrew Grenville, Andrew Grenville, Chris N. Anderson, Chris N. Anderson, Patrick P. Naulleau, Patrick P. Naulleau, } "Directly patterned inorganic hardmask for EUV lithography", Proc. SPIE 7969, Extreme Ultraviolet (EUV) Lithography II, 796915 (7 April 2011); doi: 10.1117/12.879542; https://doi.org/10.1117/12.879542
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