7 April 2011 Development of new FIB technology for EUVL mask repair
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Abstract
The next generation EUVL masks beyond hp15nm are difficult to repair for the current repair technologies including focused ion beam (FIB) and electron beam (EB) in view of the minimum repairable size. We developed a new FIB technology to repair EUVL masks. Conventional FIB use gallium ions (Ga+) generated by a liquid metal ion source (LMIS), but the new FIB uses hydrogen ions (H2+) generated by a gas field ion source (GFIS). The minimum reaction area of H2+ FIB is theoretically much smaller than that of EB. We investigated the repair performance of H2+ FIB. In the concrete, we evaluated image resolution, scan damage, etching rate, material selectivity of etching and actinic image of repaired area. The most important result is that there was no difference between the repaired area and the non-repaired one on actinic images. That result suggests that the H2+ GFIS technology is a promising candidate for the solution to repair the next generation EUVL masks beyond hp15nm.
© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Fumio Aramaki, Fumio Aramaki, Takashi Ogawa, Takashi Ogawa, Osamu Matsuda, Osamu Matsuda, Tomokazu Kozakai, Tomokazu Kozakai, Yasuhiko Sugiyama, Yasuhiko Sugiyama, Hiroshi Oba, Hiroshi Oba, Anto Yasaka, Anto Yasaka, Tsuyoshi Amano, Tsuyoshi Amano, Hiroyuki Shigemura, Hiroyuki Shigemura, Osamu Suga, Osamu Suga, } "Development of new FIB technology for EUVL mask repair", Proc. SPIE 7969, Extreme Ultraviolet (EUV) Lithography II, 79691C (7 April 2011); doi: 10.1117/12.879609; https://doi.org/10.1117/12.879609
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