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7 April 2011 Printability of buried mask defects in extreme UV lithography
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A programmed-defect mask consisting of both bump- and pit-type defects on the LTEM mask substrate has been successfully fabricated. It is seen that pit-type defects are less printable because they are more smoothed out by the employed MLM deposition process. Specifically, all bump-type defects print even at the smallest height split of 1.7 nm whereas pit-type defects print only at the largest depth split of 5.7 nm. At this depth, the largest nonprintable 1D and 2D defect widths are about 23 nm and 64 nm, respectively.
© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Pei-Cheng Hsu, Ming-Jiun Yao, Wen-Chang Hsueh, Chia-Jen Chen, Shin-Chang Lee, Ching-Fang Yu, Luke Hsu, Sheng-Ji Chin, Jimmy Hu, Shu-Hao Chang, Chih-T'sung Shih, Yen-Cheng Lu, Timothy Wu, Shinn-Sheng Yu, and Anthony Yen "Printability of buried mask defects in extreme UV lithography", Proc. SPIE 7969, Extreme Ultraviolet (EUV) Lithography II, 79691D (7 April 2011);


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