22X mask cleaning effects on EUV lithography process and lifetime

Simi A. George; Robert J. Chen; Lorie-Mae Baclea-an; Patrick P. Naulleau

doi:10.1117/12.881525

8 April 2011 22X mask cleaning effects on EUV lithography process and lifetime

Simi A. George, Robert J. Chen, Lorie-Mae Baclea-an, Patrick P. Naulleau

Author Affiliations +

Proceedings Volume 7969, Extreme Ultraviolet (EUV) Lithography II; 79691W (2011) https://doi.org/10.1117/12.881525
Event: SPIE Advanced Lithography, 2011, San Jose, California, United States

Abstract

For this paper, we evaluated the impact of repetitive cleans on a photomask that was fabricated and patterned for extreme ultraviolet lithography exposure. The lithographic performance of the cleaned mask, in terms of process window and line edge roughness, was monitored with the SEMATECH Berkeley micro-exposure tool (MET). Each process measurement of the cleaned mask was compared to a reference mask with the same mask architecture. Both masks were imaged on the same day in order to eliminate any process-related measurement uncertainties. The cleaned mask was periodically monitored with atomic force microscopy (AFM) measurements and pattern widths were monitored using scanning electron microscopy (SEM). In addition, reflectivity changes were also tracked with the aid of witness plate measurements. At the conclusion of this study, the mask under evaluation was cleaned 22 times; with none of the evaluation techniques showing any significant degradation in performance.

Citation Download Citation

Simi A. George, Robert J. Chen, Lorie-Mae Baclea-an, and Patrick P. Naulleau "22X mask cleaning effects on EUV lithography process and lifetime", Proc. SPIE 7969, Extreme Ultraviolet (EUV) Lithography II, 79691W (8 April 2011); https://doi.org/10.1117/12.881525

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