8 April 2011 Relationships between EUV resist outgassing and contamination deposition at Selete
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This presentation summarizes the relationships between resist outgassing and contamination deposition for EUV resists, in the case of EUV irradiation with high illumination intensity (>100mW/cm2). These relationships were obtained by determining the resist outgassing species by gas chromatography-mass spectroscopy (GC-MS) and the contamination on optical elements by witness sample testing.
© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hiroaki Oizumi, Hiroaki Oizumi, Kazuyuki Matsumaro, Kazuyuki Matsumaro, Satoshi Nomura, Satoshi Nomura, Julius Joseph Santillan, Julius Joseph Santillan, Toshiro Itani, Toshiro Itani, Takeo Watanabe, Takeo Watanabe, Naohiro Matsuda, Naohiro Matsuda, Tetsuo Harada, Tetsuo Harada, Hiroo Kinoshita, Hiroo Kinoshita, } "Relationships between EUV resist outgassing and contamination deposition at Selete", Proc. SPIE 7969, Extreme Ultraviolet (EUV) Lithography II, 796921 (8 April 2011); doi: 10.1117/12.878571; https://doi.org/10.1117/12.878571

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