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8 April 2011 Development of under layer material for EUV lithography
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Abstract
For the next generation lithography (NGL), several technologies have been proposed to achieve the 22nm-node devices and beyond. Extreme ultraviolet (EUV) lithography is one of the candidates for the next generation lithography. For lithography processes, the Line width roughness (LWR) and the pattern collapse of resist are the most critical issues for NGL, because of the small target critical dimension (CD) size and high aspect ratio. In this study, we design the new concept of EUV Under layer (UL) material to meet these requirements and study the impact of polymer design for pattern collapse behavior, pattern profile and LWR control by using EUV exposure tool.
© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Rikimaru Sakamoto, Bang-Ching Ho, Noriaki Fujitani, Takafumi Endo, and Ryuji Ohnishi "Development of under layer material for EUV lithography", Proc. SPIE 7969, Extreme Ultraviolet (EUV) Lithography II, 79692F (8 April 2011); https://doi.org/10.1117/12.878734
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