8 April 2011 Study of ion implantation into EUV resist for LWR improvement
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Abstract
The potentiality of line width roughness (LWR) reduction by ion implantation (I/I) in the extreme ultra violet (EUV) lithography resist pattern was studied. The Argon ions were implanted to the Line-and-Space (L/S) pattern of EUV resist with changing ion energy, dose and incident angle. The LWR and line width of 32 nm half-pitch L/S pattern was evaluated after development, after I/I and after dry etching of the experimental thin hard mask beneath the resist pattern. The LWR of 4.2 nm 3 σ, corresponding to the reduction of 1.6 nm, was obtained for resist after I/I with relatively low energy condition of 1~5 keV. On the other hand, the best value of LWR after hard mask dry etching was 3.6 nm 3σ with I/I energy of 15 keV. It was found that preferable I/I condition for LWR reduction cannot be decided I/I alone but should be optimized combined with etching.
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Yukiko Kikuchi, Daisuke Kawamura, Hiroyuki Mizuno, "Study of ion implantation into EUV resist for LWR improvement", Proc. SPIE 7969, Extreme Ultraviolet (EUV) Lithography II, 79692H (8 April 2011); doi: 10.1117/12.879359; https://doi.org/10.1117/12.879359
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