8 April 2011 Mass spectrometer characterization of reactions in photoresists exposed to extreme ultraviolet radiation
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Abstract
The development of resists that meet the requirements for resolution, line edge roughness and sensitivity remains one of the challenges for extreme ultraviolet (EUV) lithography. Two important processes that contribute to the lithographic performance of EUV resists involve the efficient decomposition of a photoacid generator (PAG) to yield a catalytic acid and the subsequent deprotection of the polymer in the resist film. We investigate these processes by monitoring the trends produced by specific masses outgassing from resists following EUV exposure and present our initial results. The resists tested are based on ESCAP polymer and either bis(4-tert-butylphenyl)iodonium perfluoro-1-butanesulfonate or bis(4-tert-butylphenyl)iodonium triflate. The components originating from the PAG were monitored at various EUV exposure doses while the deprotection of the polymer was monitored by baking the resist in vacuum and detecting the cleaved by-product from the polymer with an Extrel quadruple mass spectrometer.
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Chimaobi Mbanaso, Chimaobi Mbanaso, Seth Kruger, Seth Kruger, Craig Higgins, Craig Higgins, Yashdeep Khopkar, Yashdeep Khopkar, Alin Antohe, Alin Antohe, Brian Cardineau, Brian Cardineau, Gregory Denbeaux, Gregory Denbeaux, } "Mass spectrometer characterization of reactions in photoresists exposed to extreme ultraviolet radiation", Proc. SPIE 7969, Extreme Ultraviolet (EUV) Lithography II, 79692J (8 April 2011); doi: 10.1117/12.879507; https://doi.org/10.1117/12.879507
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