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8 April 2011 EUV brightness, spot size, and contamination measurements at the intermediate focus
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Abstract
The next generation of semi-conductor devices will be manufactured using extreme ultraviolet lithography with a laser-produced plasma as a candidate 13.5nm light source. A primary challenge, particularly for metrology tools, is the stability and the brightness of the generated EUV at the intermediate focus. In the experimental facility at ETH a novel collecting system is studied to optimize brightness and stability, and to avoid contamination after the intermediate focus. Different experimental studies are shown to confirm the design's success for both the EUV beam quality and lack of contamination after the intermediate focus.
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Andrea Z. Giovannini, Oran Morris, Ian Henderson, Samir Ellwi, and Reza S. Abhari "EUV brightness, spot size, and contamination measurements at the intermediate focus", Proc. SPIE 7969, Extreme Ultraviolet (EUV) Lithography II, 79692X (8 April 2011); doi: 10.1117/12.879598; https://doi.org/10.1117/12.879598
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