Laser produced plasma light source for EUVL

Igor V. Fomenkov; Alex I. Ershov; William N. Partlo; David W. Myers; Daniel Brown; Richard L. Sandstrom; Bruno La Fontaine; Alexander N. Bykanov; Georgiy O. Vaschenko; Oleh V. Khodykin; Norbert R. Böwering; Palash Das; Vladimir B. Fleurov; Kevin Zhang; Shailendra N. Srivastava; Imtiaz Ahmad; Chirag Rajyaguru; Silvia De Dea; Richard R. Hou; Wayne J. Dunstan; Peter Baumgart; Toshihiko Ishihara; Rod D. Simmons; Robert N. Jacques; Robert A. Bergstedt; David C. Brandt

doi:10.1117/12.882210

8 April 2011 Laser produced plasma light source for EUVL

Igor V. Fomenkov, Alex I. Ershov, William N. Partlo, David W. Myers, Daniel Brown, Richard L. Sandstrom, Bruno La Fontaine, Alexander N. Bykanov, Georgiy O. Vaschenko, Oleh V. Khodykin, Norbert R. Böwering, Palash Das, Vladimir B. Fleurov, Kevin Zhang, Shailendra N. Srivastava, Imtiaz Ahmad, Chirag Rajyaguru, Silvia De Dea, Richard R. Hou, Wayne J. Dunstan, Peter Baumgart, Toshihiko Ishihara, Rod D. Simmons, Robert N. Jacques, Robert A. Bergstedt, David C. Brandt

Author Affiliations +

Proceedings Volume 7969, Extreme Ultraviolet (EUV) Lithography II; 796933 (2011) https://doi.org/10.1117/12.882210
Event: SPIE Advanced Lithography, 2011, San Jose, California, United States

Abstract

This paper describes the development of laser-produced-plasma (LPP) extreme-ultraviolet (EUV) source architecture for advanced lithography applications in high volume manufacturing. EUV lithography is expected to succeed 193 nm immersion technology for sub-22 nm critical layer patterning. In this paper we discuss the most recent results from high qualification testing of sources in production. Subsystem performance will be shown including collector protection, out-of-band (OOB) radiation measurements, and intermediate-focus (IF) protection as well as experience in system use. This presentation reviews the experimental results obtained on systems with a focus on the topics most critical for an HVM source.

Citation Download Citation

Igor V. Fomenkov, Alex I. Ershov, William N. Partlo, David W. Myers, Daniel Brown, Richard L. Sandstrom, Bruno La Fontaine, Alexander N. Bykanov, Georgiy O. Vaschenko, Oleh V. Khodykin, Norbert R. Böwering, Palash Das, Vladimir B. Fleurov, Kevin Zhang, Shailendra N. Srivastava, Imtiaz Ahmad, Chirag Rajyaguru, Silvia De Dea, Richard R. Hou, Wayne J. Dunstan, Peter Baumgart, Toshihiko Ishihara, Rod D. Simmons, Robert N. Jacques, Robert A. Bergstedt, and David C. Brandt "Laser produced plasma light source for EUVL", Proc. SPIE 7969, Extreme Ultraviolet (EUV) Lithography II, 796933 (8 April 2011); https://doi.org/10.1117/12.882210

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