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8 April 2011 On the extensibility of extreme UV lithography
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In this paper, definition of line/space patterns at 44-, 32-, and 22-nm pitches using extreme-ultraviolet lithography (EUVL) is investigated by aerial image simulation. The results indicate that extending EUVL to the 22-nm pitch requires reducing the mask shadowing effect, which implies reducing the mask absorber thickness as well as maintaining the 6-degree angle of incidence on the mask, if the reduction ratio of the imaging system is to be kept at 4. Reduction of the mask absorber thickness can be realized by implementing attenuated phase-shifting masks. Otherwise, all critical patterns must be laid out in single orientation.
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Shinn-Sheng Yu, Anthony Yen, Shu-Hao Chang, Chih-T'sung Shih, Yen-Cheng Lu, Jimmy Hu, and Timothy Wu "On the extensibility of extreme UV lithography", Proc. SPIE 7969, Extreme Ultraviolet (EUV) Lithography II, 79693A (8 April 2011);

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