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22 April 1987 Al1-XGaxAs/GaAs Superlattice Disordering By Ion-Implantation And Diffusion: A TEM Study Of Mechanisms
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Proceedings Volume 0797, Advanced Processing of Semiconductor Devices; (1987) https://doi.org/10.1117/12.941041
Event: Advances in Semiconductors and Semiconductor Structures, 1987, Bay Point, FL, United States
Abstract
The disordering of All-xGaxAs/GaAs superlattices by ion-implantation has been studied by cross-sectional electron microscopy. It has been found that the superlattice intermixing is extensive only when accompanied by superlattice amorphization or impurity diffusion. Stacking-fault tetrahedra, interstitial dislocation loops and microtwins are the main types of defects observed after implantation and annealing. The defects are stratified and interact with the periodic strain-field of the superlattice.
© (1987) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
B. C. De Cooman, C. B. Carter, and J. R. Ralston "Al1-XGaxAs/GaAs Superlattice Disordering By Ion-Implantation And Diffusion: A TEM Study Of Mechanisms", Proc. SPIE 0797, Advanced Processing of Semiconductor Devices, (22 April 1987); https://doi.org/10.1117/12.941041
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