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22 April 1987 Deep Level Generation Centres In Low Temperature Annealed Pre-Amorphised Silicon
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Proceedings Volume 0797, Advanced Processing of Semiconductor Devices; (1987) https://doi.org/10.1117/12.941023
Event: Advances in Semiconductors and Semiconductor Structures, 1987, Bay Point, FL, United States
Abstract
Pre-amorphisation of silicon substrates with a high dose of 28Si+ is known to suppress the axial channelling of subsequent low energy boron implants and thus lead to shallow junction formation. However, it is shown that for amorphous layer regrowth below 800°C a high concentration of deep level donor defects (1-2 x 1017 cm-3) remains in the tail of the Si + implant. These have been directly correlated with the large leakage current densities (up to 10-A/cm2) measured in these low temperature activated devices. Smaller (tilde 10-5 A/cm2) leakage current densities were found in similarly pre-amorphised n+p diodes. It is shown that the difference can be explained by the donors forming a floating, and less easily depleted, n-type region in the n+p diodes.
© (1987) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
S. D. Brotherton, J. R. Ayres, B. J. Goldsmith, and A. Gill "Deep Level Generation Centres In Low Temperature Annealed Pre-Amorphised Silicon", Proc. SPIE 0797, Advanced Processing of Semiconductor Devices, (22 April 1987); https://doi.org/10.1117/12.941023
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